54. H. Joo†, J. Liu†, M. Chen†, D. Burt, B. Chomet, Y. Kim, X. Shi, K. Lu, L. Zhang, Z. Ikonic, Y. Sohn, C. Tan, C. Sirtori*, Y. Todorov*, and D. Nam*, “Actively tunable lasing in GeSn nanomechanical oscillators," Nature Nanotechnology, In Revision
53. H. Joo†, Y. Kim†, M. Chen, D. Burt, L. Zhang, B. Son, M. Luo, Z. Ikonic, C. Lee, Y. Cho, C. Tan, and D. Nam*, “All-around HfO2 stressor for tensile strain in GeSn-on-insulator nanobeam lasers,”Advanced Optical Materials, Accepted
52. J. Tan†, X. Shi†, K. Lu, H. Joo, Y. Kim, M. Chen, L. Zhang, C. Tan, K. Lim, E. Quek, and D. Nam*, “Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies,”Optics Letters 48, 4269-4271 (2023) [PDF]
6. Non-Drafted Singapore Patent Application: “Biaxially strained crossbeam germanium laser structure,”D. Nam, D. Burt, Y. Jung, Y. Kim, H. Joo, Submitted on 16 Dec 2020
5. Non-Drafted Singapore Patent Application: “Graphene nanopillar structures for giant pseudo-magnetic fields,”D. Nam, D. Kang, M. Luo, H. Sun, X. Gao, K. Lu, Submitted on 15 Dec 2020
4. Non-Drafted Singapore Patent Application: “Triaxially strained graphene structure for large-area pseudo-magnetic field,”D. Nam, H. Sun, M. Luo, D. Burt, D. Kang, Submitted on 14 Dec 2020
3. Non-Drafted Singapore Patent Application, Application Number 10202012548S: “An electrically pumped strained GeSn laser structure,”D. Nam, D. Burt, Y. Jung, Y. Kim, H. Joo, Filed on 15 Dec 2020
2. Non-Drafted Singapore Patent Application, Application Number 10201806832X: “Highly strained germanium laser on a silicon platform,”D. Nam, C. Tan, Filed on 13 Aug 2018
1. US Patent No.0,372,455: “Crossed nanobeam structure for a low-threshold germanium laser,”D. Nam, J. Petykiewicz, D. Sukhdeo, S. Gupta, J. Vuckovic, K. Saraswat, Issued Sept. 9, 2015[LINK]